Nupad 107 Semiconductor Device Simulation using Adaptive Refmement and Streamline Upwinding
نویسنده
چکیده
An adaptive mesh refuiement scheme and data shucture has been developed in conjunction with a streamline upwind Petrov-Galerkin finite element formulation for anaiysis of the semiconductor device equations. The nonlinear elecaostatic potential equation and convection dorninated camier current continuity equations are iteratively decoupled in the solution algorithm. Incremental continuation is employed to improve the nonlinear solution iteration and to produce an efficient and robust scheme. The adaptive refinement scheme also em~loys an element-by-element coniumte d i e n t solution algorithm which performs very &ffiiiently on and vector processors. Sample numen>al results for MOSFET ~robierns indicate the effectiveness of the Petrov-Galerkin method and demonstrate its' superi&nty over traditional Scharfetter-Gummel approaches.
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